Physics-Based Modeling of the Single Event Upset Critical Charge in Digital Electronics
A general approach to modeling the critical charge for single event effects in digital integral circuits is described. Explicit expressions are obtained for the critical charges for single event upsets (SEU) as functions of the technological and circuit parameters of CMOS SRAM.
Authors
- G. I. Zebrev
- A. S. Rodin
- I. A. Makarova
- E. N. Abramova
- A. A. Mateiko
Institutions
- Photronics (United States) (US)
- National Research Nuclear University MEPhI (RU)
Publication Details
- Journal
- Russian Microelectronics
- Published
- 2025-12-01
- DOI
- https://doi.org/10.1134/s1063739725601468
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00