Decoherence Measure of Single-Qubit Ion Gate

This work derives an analytical expression for the decoherence measure of a single-qubit ion gate based on a three-level atomic model driven by two laser fields. Under the rotating-wave approximation and large detuning conditions, an effective Raman Hamiltonian is constructed to describe the ion-laser interaction. The resulting decoherence measure captures the influence of effective detuning differences and phase shifts between the driving fields.

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Publication Details

Journal
Russian Microelectronics
Published
2025-12-01
DOI
https://doi.org/10.1134/s1063739725601493
Primary Topic
Quantum Information and Cryptography
Type
article
Field-Weighted Citation Impact
0.00
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article

Decoherence Measure of Single-Qubit Ion Gate

A. Kuznetsova, L. E. Fedichkin
Russian Microelectronics
Quantum Information and Cryptography
article

Decoherence Measure of Single-Qubit Ion Gate

A. Kuznetsova, L. E. Fedichkin
article en

Abstract

This work derives an analytical expression for the decoherence measure of a single-qubit ion gate based on a three-level atomic model driven by two laser fields. Under the rotating-wave approximation and large detuning conditions, an effective Raman Hamiltonian is constructed to describe the ion-laser interaction. The resulting decoherence measure captures the influence of effective detuning differences and phase shifts between the driving fields.

Russian MicroelectronicsVol. 54(8)
Moscow Institute of Physics and Technology (RU), Moscow Power Engineering Institute (RU), Kurchatov Institute (RU), Institute of Physics and Technology (RU), Moscow Aviation Institute (RU)
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Openalex Percentile: Top 12%
Quantum Information and Cryptography
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