Express Analysis for Heterostructures Quality
The paper proposes an Innovative method for express assessment of the Si epitaxial structure parameters with SAM (substrate, absorption, and multiplication) architecture for avalanche photodiodes (APD) is discussed in the paper. Finally, a Si heterostructure was grown, models for verification were developed, electro-optical tests were carried out to assess the characteristics of the epitaxial structure and real characteristics were compared with simulated results.
Authors
- V. V. Borichok
- V. O. Atyunin
- E. I. Kobzev
- M. N. Orlova
- O. I. Rabinovich
- U. V. Osipov
- I. V. Borzykh
- A. A. Savchuk
Institutions
- National University of Science and Technology (RU)
Publication Details
- Journal
- Russian Microelectronics
- Published
- 2025-12-01
- DOI
- https://doi.org/10.1134/s1063739725601316
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00