Features of Dissipative Processes during Annealing of Silicon Structures with Buried Silicate Layers

Self-organization phenomena in silicon implanted with $${\text{O}}_{2}^{ + }$$ ions and glass-forming Pb+ or P+ ions are examined. Subsequent annealing was performed at 1150°C. Dissipative processes of a wave nature were observed during the annealing process. For silicon structures implanted with high doses of $${\text{O}}_{2}^{ + }$$ and Pb+ ions, wave relaxation diffusion of lead was the irreversible process that served as one of the main sources of energy dissipation in the system. As a result of self-organization, a SOI-type structure with a three-layer lead-silicate insulator was synthesized. For silicon structures implanted with P+ and $${\text{O}}_{2}^{ + }$$ ions and subjected to nonisothermal pretreatment, instead of a uniform distribution of defects throughout the material, localized plastic deformation occurred. In these foci of localized deformation, energy dissipation occurs in the form of heat or crack formation, which leads to irreversible changes—the destruction of the material. An autowave mechanism for the development of these cracks was identified using the switching wave scheme.