Colloidal InSb Quantum Dots for Short-Wave Infrared Photodetection

Colloidal InSb quantum dots (QDs) have emerged as promising environmentally benign candidates for short-wave infrared (SWIR, 1400–2500 nm) detection. They offer a heavy-metal-free alternative to lead- and mercury-based IR QDs while maintaining the advantages of solution processability for low-cost optoelectronics. This review provides a comprehensive summary of recent methodological advances and key developments in InSb QDs. It covers controlled synthesis routes from reactive precursors to co-reduction strategies and nucleation-growth mechanisms, as well as sophisticated surface engineering approaches such as surface passivation, ligand exchange, and core-shell structuring. We further discuss functional device architectures including photoconductors, photodiodes, and hybrid heterojunctions, highlighting critical progress in spectral extension and charge transport enhancement within QD films. Finally, we outline the fundamental challenges on the path to industrialization, focusing on precursor accessibility and reproducibility, surface oxidation and trap-state management, and device-level energy alignment. This review aims to deliver theoretical insights and actionable strategies for developing InSb QDs and advancing their high-performance, eco-friendly SWIR detection technologies.

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Publication Details

Journal
Transactions on Electrical and Electronic Materials
Published
2026-03-21
DOI
https://doi.org/10.1007/s42341-026-00703-6
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
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article

Colloidal InSb Quantum Dots for Short-Wave Infrared Photodetection

Haiyun Ma, R. An, T. Zhao
Transactions on Electrical and Electronic Materials
Quantum Dots Synthesis And Properties
article

Colloidal InSb Quantum Dots for Short-Wave Infrared Photodetection

Haiyun Ma, R. An, T. Zhao
article en

Abstract

Colloidal InSb quantum dots (QDs) have emerged as promising environmentally benign candidates for short-wave infrared (SWIR, 1400–2500 nm) detection. They offer a heavy-metal-free alternative to lead- and mercury-based IR QDs while maintaining the advantages of solution processability for low-cost optoelectronics. This review provides a comprehensive summary of recent methodological advances and key developments in InSb QDs. It covers controlled synthesis routes from reactive precursors to co-reduction strategies and nucleation-growth mechanisms, as well as sophisticated surface engineering approaches such as surface passivation, ligand exchange, and core-shell structuring. We further discuss functional device architectures including photoconductors, photodiodes, and hybrid heterojunctions, highlighting critical progress in spectral extension and charge transport enhancement within QD films. Finally, we outline the fundamental challenges on the path to industrialization, focusing on precursor accessibility and reproducibility, surface oxidation and trap-state management, and device-level energy alignment. This review aims to deliver theoretical insights and actionable strategies for developing InSb QDs and advancing their high-performance, eco-friendly SWIR detection technologies.

Transactions on Electrical and Electronic Materials
Institut de Recherche et d’Innovation (FR), University of Hong Kong (HK)
Industry, innovation and infrastructure
Openalex Percentile: Top 15%
Quantum Dots Synthesis And Properties
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