High-temperature ferromagnetism and large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor

While the room-temperature anomalous Nernst effect (ANE) has been intensively studied in various ferromagnetic metals, it has never been studied in ferromagnetic semiconductors (FMSs) due to their low Curie temperature (TC). In this work, by optimizing the growth condition, we have grown an n-type (In,Fe)Sb FMS thin film with high TC ∼ 460 K at the Fe concentration of 30%, which is the highest TC reported so far in n-type FMSs. Using the high-TC (In,Fe)Sb thin film, we observe ANE with a large thermopower SxyANE = −3.2 μV/K at 332 K and −1.3 μV/K at 447 K. The large ANE in (In,Fe)Sb at room temperature is comparable to those observed in Mn3Sn and Co2MnGa topological materials.

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Publication Details

Journal
Applied Physics Letters
Published
2026-03-16
DOI
https://doi.org/10.1063/5.0313623
Primary Topic
Heusler alloys: electronic and magnetic properties
Type
article
Field-Weighted Citation Impact
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article

High-temperature ferromagnetism and large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor

Pham Nam Hai, M. Tanaka, Shuzo Oeda, Kota Ejiri et al.
Applied Physics Letters
Heusler alloys: electronic and magnetic properties
article

High-temperature ferromagnetism and large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor

Pham Nam Hai, M. Tanaka, Shuzo Oeda, Kota Ejiri, Wentao Li, Yun Jaeyeon, Kota Iwakura
article en

Abstract

While the room-temperature anomalous Nernst effect (ANE) has been intensively studied in various ferromagnetic metals, it has never been studied in ferromagnetic semiconductors (FMSs) due to their low Curie temperature (TC). In this work, by optimizing the growth condition, we have grown an n-type (In,Fe)Sb FMS thin film with high TC ∼ 460 K at the Fe concentration of 30%, which is the highest TC reported so far in n-type FMSs. Using the high-TC (In,Fe)Sb thin film, we observe ANE with a large thermopower SxyANE = −3.2 μV/K at 332 K and −1.3 μV/K at 447 K. The large ANE in (In,Fe)Sb at room temperature is comparable to those observed in Mn3Sn and Co2MnGa topological materials.

Applied Physics LettersVol. 128(11)
Tokyo Institute of Technology (JP), Spintronics Research Network of Japan (JP), The University of Tokyo (JP)
Openalex Percentile: Top 17%
Heusler alloys: electronic and magnetic properties
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