UV Imaging Electronics and Packaging for Venus Mission

GE Aerospace Research, in collaboration with NASA Glenn Research Center (NASA Glenn) and Ohio Aerospace Institute (OAI), are designing and packaging a UV Imager using silicon carbide (SiC) electronic components to demonstrate feasibility of an ultraviolet (UV) near-field image camera for imaging geological samples on the surface of Venus. The SiC imager is sensitive to UV light from a power source and will use either reflected light or fluorescence from surface geological formations. The target operating environment is 500°C for 60 days with a target image resolution of 1 mm per pixel at 0.5 m distance. Packaging materials and devices were selected that have previously been tested at 500°C in air and submitted to a simulated Venus environment (460°C, 1344 psia, and corrosive gases) for 10 day intervals. The materials were evaluated for electrical and chemical degradation after exposure. Chemical degradation was evaluated using X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy (HAXPES). Results are presented.