Memory Phenomenon of GaN pn Junction by Engineering Its Interface, Which is Stable at High Temperatures up to 500oC

Memory Phenomenon of GaN pn Junction by Engineering Its Interface, Which is Stable at High Temperatures up to 500oC

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Publication Details

Journal
IMAPSource Proceedings
Published
2026-02-04
DOI
https://doi.org/10.4071/001c.156246
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Memory Phenomenon of GaN pn Junction by Engineering Its Interface, Which is Stable at High Temperatures up to 500oC

Kai Fu
IMAPSource Proceedings
GaN-based semiconductor devices and materials
article

Memory Phenomenon of GaN pn Junction by Engineering Its Interface, Which is Stable at High Temperatures up to 500oC

Kai Fu
article en

Abstract

Memory Phenomenon of GaN pn Junction by Engineering Its Interface, Which is Stable at High Temperatures up to 500oC

IMAPSource ProceedingsVol. 2025(HiTEC, CICMT, Power)
University of Utah (US)
Openalex Percentile: Top 16%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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