2D excitonics with atomically thin lateral heterostructures

Semiconducting transition metal dichalcogenides (TMDs), such as MoSe<sub>2</sub>and WSe<sub>2</sub>, exhibit unique optical and electronic properties. Vertical stacking of layers of one or more TMDs, to create heterostructures, has expanded the fields of moiré physics and twistronics. Bottom-up fabrication techniques, such as chemical vapor deposition, have advanced the creation of heterostructures beyond what was possible with mechanical exfoliation and stacking. These techniques now enable the fabrication of lateral heterostructures, where two or more monolayers are covalently bonded in the plane of their atoms. At their atomically sharp interfaces, lateral heterostructures exhibit additional phenomena, such as the formation of charge-transfer excitons, in which the electron and hole reside on opposite sides of the interface. Due to the energy landscape created by differences in the band structures of the constituent materials, unique effects such as unidirectional exciton transport and excitonic lensing can be observed in lateral heterostructures. This review outlines recent progress in exciton dynamics and spectroscopy of TMD-based lateral heterostructures and offers an outlook on future developments in excitonics in this promising system.

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Publication Details

Journal
Reports on Progress in Physics
Published
2026-03-17
DOI
https://doi.org/10.1088/1361-6633/ae530c
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

2D excitonics with atomically thin lateral heterostructures

Ioannis Paradisanos, Hassan Lamsaadi, Bernhard Urbaszek, Sai Shradha et al.
Reports on Progress in Physics
2D Materials and Applications
article

2D excitonics with atomically thin lateral heterostructures

Ioannis Paradisanos, Hassan Lamsaadi, Bernhard Urbaszek, Sai Shradha, Jean‐Marie Poumirol, Julian Picker, Vincent Paillard, Ermin Malić, Roberto Rosati, Daria I. Markina, Md Tarik Hossain, Laurent Lombez, Lukas Krelle, Prasana Kumar Sahoo, Nicole Engel, Kenji Watanabe, Luc Frederik Oswald, Pierre Renucci, Andrey Turchanin, Xavier Marie, Takashi Taniguchi
article en

Abstract

Semiconducting transition metal dichalcogenides (TMDs), such as MoSe<sub>2</sub>and WSe<sub>2</sub>, exhibit unique optical and electronic properties. Vertical stacking of layers of one or more TMDs, to create heterostructures, has expanded the fields of moiré physics and twistronics. Bottom-up fabrication techniques, such as chemical vapor deposition, have advanced the creation of heterostructures beyond what was possible with mechanical exfoliation and stacking. These techniques now enable the fabrication of lateral heterostructures, where two or more monolayers are covalently bonded in the plane of their atoms. At their atomically sharp interfaces, lateral heterostructures exhibit additional phenomena, such as the formation of charge-transfer excitons, in which the electron and hole reside on opposite sides of the interface. Due to the energy landscape created by differences in the band structures of the constituent materials, unique effects such as unidirectional exciton transport and excitonic lensing can be observed in lateral heterostructures. This review outlines recent progress in exciton dynamics and spectroscopy of TMD-based lateral heterostructures and offers an outlook on future developments in excitonics in this promising system.

Reports on Progress in Physics
Centre National de la Recherche Scientifique (FR), Université Toulouse III - Paul Sabatier (FR), University of Crete (GR), Indian Institute of Technology Kharagpur (IN), Philipps University of Marburg (DE), Université Fédérale de Toulouse Midi-Pyrénées (FR), National Institute for Environmental Studies (JP), National Institute for Materials Science (JP), Technische Universität Darmstadt (DE), Science and Technology Park of Crete (GR), Hôpital Rangueil (FR), Centre d’Élaboration de Matériaux et d’Études Structurales (FR), Institute of Molecular Biology and Biotechnology (BG), Friedrich Schiller University Jena (DE)
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