Investigation on Wavelength-Dependent Light Extraction Efficiency of InGaN-Based Micro-LED Structures Using Numerical Simulations

The external quantum efficiency (EQE) of InGaN-based LEDs typically decreases as wavelength shifts from blue to green to red. While this trend has often been attributed to the internal quantum efficiency of InGaN quantum wells (QWs), the influence of light extraction efficiency (LEE) on the wavelength-dependent EQE has received less attention. In this study, we numerically investigated the LEE of blue, green, and red InGaN micro-LED structures using finite-difference time-domain simulations, including the dispersion of composite materials. We first optimized the distance between the QW and the Ag reflector for each color, then evaluated the total LEE and the LEE within a 20° collection angle as the micro-LED structure diameter varied. For diameters ranging from 2 to 6 μm, green and red micro-LEDs exhibited average LEE values that were over 10% and 20% higher than those of blue micro-LEDs, respectively. This is attributed to the decreasing refractive index of GaN and increasing reflectance of the Ag reflector as the wavelength increases. Such substantial variations in LEE among blue, green, and red InGaN micro-LEDs highlight the importance of considering wavelength-dependent LEE when interpreting measured EQE results.