Investigation of electrical properties of fabricated Schottky diodes with organic interfaces in terms of radiation

The behavior of metal/semiconductor structures with organic interfaces exposed to proton radiation in radiation environments was investigated. For this purpose, organic-based Schottky devices have been fabricated within laboratory facilities, and the fundamental electrical parameters of structures have been investigated using graphs. The current-voltage (I-V) characteristics of metal/methyl-red/semiconductor Schottky devices before and after irradiation have been obtained, and changes in their electrical parameters have been investigated using these characteristics. This study is important in the context of energy storage and protection in power applications of electronic devices for space grade. Recently, energy storage technologies and power systems resistant to changes in radiation environments has become critical in electronic power applications.