Structural and vibrational characterization of Si <sub>3</sub> N <sub>4</sub> nanopowders under electron beam irradiation

The structural and vibrational properties of Si<sub>3</sub>N<sub>4</sub>nanopowders were investigated before and after electron irradiation at fluences of 1 × 10<sup>15</sup>, 5 × 10<sup>15</sup>, and 1 × 10<sup>16</sup>e cm<sup>-2</sup>. X-ray diffraction analysis revealed that the material retains its biphasic nature (<i>α</i>- and<i>β</i>-Si<sub>3</sub>N<sub>4</sub>) after irradiation, although changes in phase fractions and lattice parameters were observed. Fourier-transform infrared spectroscopy (400-1300 cm<sup>-1</sup>) showed shifts in peak positions and variations in intensities, indicating bond rearrangements and modifications in the local Si-N and Si-O environment. Raman spectroscopy further confirmed irradiation-induced structural changes through systematic peak shifts and spectral modifications. The results demonstrate that electron irradiation significantly affects the local structure and defect formation in Si<sub>3</sub>N<sub>4</sub>nanopowders while preserving the overall crystalline phases.

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Publication Details

Journal
Journal of Physics Condensed Matter
Published
2026-03-16
DOI
https://doi.org/10.1088/1361-648x/ae529c
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
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article

Structural and vibrational characterization of Si 3 N 4 nanopowders under electron beam irradiation

M Yu Tashmetov, Maksudjon Buriev
Journal of Physics Condensed Matter
Silicon Nanostructures and Photoluminescence
article

Structural and vibrational characterization of Si 3 N 4 nanopowders under electron beam irradiation

M Yu Tashmetov, Maksudjon Buriev
article en

Abstract

The structural and vibrational properties of Si<sub>3</sub>N<sub>4</sub>nanopowders were investigated before and after electron irradiation at fluences of 1 × 10<sup>15</sup>, 5 × 10<sup>15</sup>, and 1 × 10<sup>16</sup>e cm<sup>-2</sup>. X-ray diffraction analysis revealed that the material retains its biphasic nature (<i>α</i>- and<i>β</i>-Si<sub>3</sub>N<sub>4</sub>) after irradiation, although changes in phase fractions and lattice parameters were observed. Fourier-transform infrared spectroscopy (400-1300 cm<sup>-1</sup>) showed shifts in peak positions and variations in intensities, indicating bond rearrangements and modifications in the local Si-N and Si-O environment. Raman spectroscopy further confirmed irradiation-induced structural changes through systematic peak shifts and spectral modifications. The results demonstrate that electron irradiation significantly affects the local structure and defect formation in Si<sub>3</sub>N<sub>4</sub>nanopowders while preserving the overall crystalline phases.

Journal of Physics Condensed MatterVol. 38(12)
Academy of Sciences Republic of Uzbekistan (UZ)
Openalex Percentile: Top 21%
Silicon Nanostructures and Photoluminescence
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