Raman Microspectroscopy for Structural Indication in Ultrafast Laser Writing

Femtosecond laser fabrication enables the creation of a wide range of devices, but its scalability and yield can be limited by the lack of real-time, in situ monitoring tools. In particular, there is a strong need for metrics that directly correlate with device performance. Raman microspectroscopy provides a non-destructive route for in situ characterization. Here, we demonstrate its potential to assess the electrical performance of laser-written graphitic electrodes in diamond. By combining hyperspectral mapping with electrical testing, we show that depletion of the 1332 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:semantics><mml:msup><mml:mi>cm</mml:mi> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>1</mml:mn></mml:mrow> </mml:msup> <mml:annotation>${\rm cm}^{-1}$</mml:annotation></mml:semantics> </mml:math> sp3 Raman line serves as a monotonic and robust predictor of resistance, offering clear advantages over commonly used spectral features. We further introduce hyperspectral unmixing as a label-free approach to identify relevant spectral signatures in fabrication processes where Raman markers are less defined. Importantly, the methodology we present is not restricted to diamond but can be adapted to other host materials and functionalities, offering a practical path toward specification-driven fs-laser microfabrication.