Toroidicity as a route towards non-volatile quaternary memory in antiferromagnets

Magnetoelectric materials couple magnetic and electric properties and are promising candidates for future data storage applications. While a strong coupling between the two order parameters leads to cross-switchability, the separate actuation enables four different polarization states, offering prospects for a quaternary memory device, an auspicious high-density memory concept, especially in the post-Moore-law era. Here, we present a study on a bulk single-crystal of antiferromagnetic and ferrotoroidic LiNi<sub>0.8</sub>Fe<sub>0.2</sub>PO<sub>4</sub> in which a spontaneous tilt of the head-to-tail spin configuration leads to the presence of four different magnetic domains. Through Spherical Neutron Polarimetry, we deliver compelling evidence for a controlled preferential population of each of these four domains individually by applying perpendicular electric and magnetic fields. Our results suggest a new route towards the realization of high-density data storage devices based on single-phase antiferromagnetic materials.

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Publication Details

Journal
Nature Communications
Published
2026-03-16
DOI
https://doi.org/10.1038/s41467-026-70767-8
Primary Topic
Multiferroics and related materials
Type
article
Field-Weighted Citation Impact
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article

Toroidicity as a route towards non-volatile quaternary memory in antiferromagnets

Rasmus Toft-Petersen, David Vaknin, N. Qureshi, K. Beauvois et al.
Nature Communications
Multiferroics and related materials
article

Toroidicity as a route towards non-volatile quaternary memory in antiferromagnets

Rasmus Toft-Petersen, David Vaknin, N. Qureshi, K. Beauvois, Niels Bech Christensen, Mikkel Ravn-Feld, Mikkel C. Larsen, José Alberto Rodríguez-Velamazán, Adheena Painganoor, Paul Steffens
article en

Abstract

Magnetoelectric materials couple magnetic and electric properties and are promising candidates for future data storage applications. While a strong coupling between the two order parameters leads to cross-switchability, the separate actuation enables four different polarization states, offering prospects for a quaternary memory device, an auspicious high-density memory concept, especially in the post-Moore-law era. Here, we present a study on a bulk single-crystal of antiferromagnetic and ferrotoroidic LiNi<sub>0.8</sub>Fe<sub>0.2</sub>PO<sub>4</sub> in which a spontaneous tilt of the head-to-tail spin configuration leads to the presence of four different magnetic domains. Through Spherical Neutron Polarimetry, we deliver compelling evidence for a controlled preferential population of each of these four domains individually by applying perpendicular electric and magnetic fields. Our results suggest a new route towards the realization of high-density data storage devices based on single-phase antiferromagnetic materials.

Nature Communications
Iowa State University (US), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), European Spallation Source (SE), Ames National Laboratory (US), CEA Grenoble (FR), Institut de Recherche Interdisciplinaire de Grenoble (FR), Institut Laue-Langevin (FR), Université Grenoble Alpes (FR), Technical University of Denmark (DK)
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Multiferroics and related materials
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