Tailoring high-quality germanium crystal via high magnetic field
High-quality germanium single crystals are vital for infrared and semiconductor applications but are plagued by melt convection during growth. This study demonstrates that applying a 10 T high magnetic field during directional solidification stabilizes the solid–liquid interface and reduces dislocation density by over 35%. The resulting crystals exhibit significantly higher electrical resistivity and an 89% improvement in infrared transmittance. This method provides a practical ground-based route to achieving microgravity-like growth conditions for superior germanium crystals.
Authors
- Bangfei Zhou
- Zhongze Lin (ORCID: https://orcid.org/0000-0003-2238-3789)
- Congjiang Zhang
- Wei Lin (ORCID: https://orcid.org/0000-0002-1863-4306)
- Yi Zhong (ORCID: https://orcid.org/0000-0002-7138-5302)
- Zhuolin Li (ORCID: https://orcid.org/0000-0002-2530-820X)
- Qi Li (ORCID: https://orcid.org/0000-0001-8776-8730)
- Peijian SHI
- Zhe Shen (ORCID: https://orcid.org/0000-0002-9013-4744)
- Biao Ding (ORCID: https://orcid.org/0000-0003-3431-5214)
- Meilong Feng
- Weili Ren
- Tianxiang Zheng
Institutions
- Shanghai University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2026-03-16
- DOI
- https://doi.org/10.1063/5.0312731
- Primary Topic
- Solidification and crystal growth phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00