Over 300 mA in a diamond JFET: interdigitated FET structure optimization

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SPIRE - Sciences Po Institutional REpository
Published
2026-03-04
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Over 300 mA in a diamond JFET: interdigitated FET structure optimization

Ralph Makhoul, Damien Michez, Juliette Letellier, Rouger, Nicolas, C. et al.
SPIRE - Sciences Po Institutional REpository
Advancements in Semiconductor Devices and Circuit Design
article

Over 300 mA in a diamond JFET: interdigitated FET structure optimization

Ralph Makhoul, Damien Michez, Juliette Letellier, Rouger, Nicolas, C., Julien Pernot
article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Institut Universitaire de France (FR), Laboratoire Plasma et Conversion d'Energie (FR), Institut Néel (FR), Laboratoire de Génie Électrique de Grenoble (FR)
Partnerships for the goals
Openalex Percentile: Top 21%
Advancements in Semiconductor Devices and Circuit Design
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