Heterogeneous 3-D Integration Approach for Nanoelectromechanical Switches

We present a three-dimensional (3-D) heterogeneous integration approach that enables seamless incorporation of nanoelectromechanical (NEM) devices within a standard CMOS process. The developed process flow supports the co-integration of multiple device types and functionalities, demonstrated here with both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches, which can be utilized to construct densely integrated NEM switch-based logic circuits and non-volatile memories. This approach establishes a scalable route toward compact, low-power hybrid systems that combine CMOS and NEM technologies in a single chip.