Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

ABSTRACT Co‐integration of extremely thin n‐ and p‐type semiconductor layers deposited in wafer‐scale at low temperatures (≤200°C) opens new avenues for novel electronic devices. Here, a multi‐functional ZnO–Te heterojunction device exhibiting double negative differential transconductance (D‐NDT) characteristics is presented. By modulating the overlap length of n‐ and p‐type regions, the carrier transport mechanism transitions from single NDT to D‐NDT, enabling multi‐state switching within a single device. Leveraging the unique double‐peak transfer curve, a single‐stage frequency quadrupler is demonstrated, resulting in a reduction of device count by 64%–75% compared to standard analog and digital circuit topologies. The functionality of the frequency quadrupler is verified using a system clock generator driving a 2‐bit binary counter, achieving a fourfold increase in data processing throughput within a single input cycle. These results suggest that the ZnO–Te D‐NDT device offers a promising pathway for realizing area‐efficient and multi‐functional integrated circuits for future electronics.