Generic logic block based on bias-gated 2D MoS2 transistors

Integrating two-dimensional (2D) semiconductors and CMOS technology is a promising pathway for next-generation integrated circuits. However, the implementation of this strategy is hindered by the limited polarity modulation of 2D semiconductors and the inherent characteristics of CMOS architectures. Here, we report a generic logic block (GLB) that uses bias-gated molybdenum disulfide transistors (BG-FET). The BG-FETs exhibit threshold-adaptive field-effect characteristics through simple bias manipulation, enabling good rail-to-rail operation in the inverter circuits. The GLB composed of four BG-FETs can perform reconfigurable logic operations in a single circuit, including basic gate circuits, half-adder, multiplexer, encoder and static-random-access-memory. In contrast, conventional CMOS circuits require at least 100 transistors to perform the same set of operations. We further integrate flip-flop circuits and arithmetic logic units by cascading as-fabricated GLBs, featuring a transistor count saving of over 60% compared to CMOS design. Collectively, BG-FET-based GLB emerges as a post-CMOS integration technology with compelling potential.

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Publication Details

Journal
Nature Communications
Published
2026-03-15
DOI
https://doi.org/10.1038/s41467-026-70712-9
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Generic logic block based on bias-gated 2D MoS2 transistors

Kuanglei Chen, Huihui Yu, Xiaofu Wei, Jinsen Shang et al.
Nature Communications
2D Materials and Applications
article

Generic logic block based on bias-gated 2D MoS2 transistors

Kuanglei Chen, Huihui Yu, Xiaofu Wei, Jinsen Shang, Mengyu Hong, Li Gao, Yue Zhang, He Jiang, Zheng Zhang, Zhangyi Chen, Xiankun Zhang
article en

Abstract

Integrating two-dimensional (2D) semiconductors and CMOS technology is a promising pathway for next-generation integrated circuits. However, the implementation of this strategy is hindered by the limited polarity modulation of 2D semiconductors and the inherent characteristics of CMOS architectures. Here, we report a generic logic block (GLB) that uses bias-gated molybdenum disulfide transistors (BG-FET). The BG-FETs exhibit threshold-adaptive field-effect characteristics through simple bias manipulation, enabling good rail-to-rail operation in the inverter circuits. The GLB composed of four BG-FETs can perform reconfigurable logic operations in a single circuit, including basic gate circuits, half-adder, multiplexer, encoder and static-random-access-memory. In contrast, conventional CMOS circuits require at least 100 transistors to perform the same set of operations. We further integrate flip-flop circuits and arithmetic logic units by cascading as-fabricated GLBs, featuring a transistor count saving of over 60% compared to CMOS design. Collectively, BG-FET-based GLB emerges as a post-CMOS integration technology with compelling potential.

Nature Communications
Beijing University of Technology (CN), Advanced Technology & Materials (China) (CN), University of Science and Technology Beijing (CN)
National Natural Science Foundation of China, Ministry of Education of the People's Republic of China, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 23%
2D Materials and Applications
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