Generic logic block based on bias-gated 2D MoS2 transistors
Integrating two-dimensional (2D) semiconductors and CMOS technology is a promising pathway for next-generation integrated circuits. However, the implementation of this strategy is hindered by the limited polarity modulation of 2D semiconductors and the inherent characteristics of CMOS architectures. Here, we report a generic logic block (GLB) that uses bias-gated molybdenum disulfide transistors (BG-FET). The BG-FETs exhibit threshold-adaptive field-effect characteristics through simple bias manipulation, enabling good rail-to-rail operation in the inverter circuits. The GLB composed of four BG-FETs can perform reconfigurable logic operations in a single circuit, including basic gate circuits, half-adder, multiplexer, encoder and static-random-access-memory. In contrast, conventional CMOS circuits require at least 100 transistors to perform the same set of operations. We further integrate flip-flop circuits and arithmetic logic units by cascading as-fabricated GLBs, featuring a transistor count saving of over 60% compared to CMOS design. Collectively, BG-FET-based GLB emerges as a post-CMOS integration technology with compelling potential.
Authors
- Kuanglei Chen
- Huihui Yu (ORCID: https://orcid.org/0009-0009-7417-9385)
- Xiaofu Wei
- Jinsen Shang
- Mengyu Hong
- Li Gao
- Yue Zhang
- He Jiang
- Zheng Zhang
- Zhangyi Chen
- Xiankun Zhang
Institutions
- Beijing University of Technology (CN)
- Advanced Technology & Materials (China) (CN)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2026-03-15
- DOI
- https://doi.org/10.1038/s41467-026-70712-9
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Ministry of Education of the People's Republic of China
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities