Strain‐Mediated Non‐Volatile Polarization in Twisted Moiré Superlattices

ABSTRACT Moiré superlattices characterized by their atomic‐scale sliding ferroelectric (FE) ordering and tunable interfacial polarization properties have emerged as attractive building blocks for post‐Moore's law electronics. However, its topological protection from domain wall networks results in antiferroelectric (AFE) volatile characteristics, a fundamental obstacle to practical device applications. Here, utilizing twisted boron nitride as a model system, we propose a regulation strategy based on mechanical stress engineering, which drives a domain wall transition from Σ 0° to Σ 30° configurations. Through this approach, the applied stress breaks the balance between anti‐aligned dipoles and generates a double domain wall, therefore establishing a net out‐of‐plane polarization. Our approach achieves a phase transition from AFE to FE order, enabling stable nonvolatile polarization switching and paving the way for developing practical low‐power nonvolatile memory devices based on moiré platforms.

Authors

Institutions

Publication Details

Journal
Advanced Functional Materials
Published
2026-03-13
DOI
https://doi.org/10.1002/adfm.74888
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Strain‐Mediated Non‐Volatile Polarization in Twisted Moiré Superlattices

B. Y. Chen, Ping‐Hua Xiang, Ming Tian, Neng Wan et al.
Advanced Functional Materials
Ferroelectric and Piezoelectric Materials
article

Strain‐Mediated Non‐Volatile Polarization in Twisted Moiré Superlattices

B. Y. Chen, Ping‐Hua Xiang, Ming Tian, Neng Wan, Wei‐Hao Sun, Wenyi Tong, Haowen Xu, Chun‐Gang Duan, Luqi Wei, Ni Zhong, Zhao Guan, Wencheng Fan
article en

Abstract

ABSTRACT Moiré superlattices characterized by their atomic‐scale sliding ferroelectric (FE) ordering and tunable interfacial polarization properties have emerged as attractive building blocks for post‐Moore's law electronics. However, its topological protection from domain wall networks results in antiferroelectric (AFE) volatile characteristics, a fundamental obstacle to practical device applications. Here, utilizing twisted boron nitride as a model system, we propose a regulation strategy based on mechanical stress engineering, which drives a domain wall transition from Σ 0° to Σ 30° configurations. Through this approach, the applied stress breaks the balance between anti‐aligned dipoles and generates a double domain wall, therefore establishing a net out‐of‐plane polarization. Our approach achieves a phase transition from AFE to FE order, enabling stable nonvolatile polarization switching and paving the way for developing practical low‐power nonvolatile memory devices based on moiré platforms.

Advanced Functional Materials
Shanxi University (CN), Fudan University (CN), Ministry of Education (BD), East China Normal University (CN), Southeast University (CN)
Openalex Percentile: Top 24%
Ferroelectric and Piezoelectric Materials
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.