(Anti)Ferroelectric HfZrO2: from non volatile memory to energy storage applications

Authors

I. C. Infante (ORCID: https://orcid.org/0000-0003-3929-6614)
Damien Deleruyelle (ORCID: https://orcid.org/0000-0003-2394-1359)
Jordan Bouaziz (ORCID: https://orcid.org/0000-0003-0975-5066)
Bertrand Vilquin (ORCID: https://orcid.org/0000-0002-7404-0019)
Martine Le Berre (ORCID: https://orcid.org/0000-0001-5522-7489)
S. Gonzalez
Alhada Kevin
Grégoire Magagnin
Brice Gautier

Institutions

Institut des Nanotechnologies de Lyon (FR)
Sorbonne Université (FR)
Institut des NanoSciences de Paris (FR)
Institut National des Sciences Appliquées de Lyon (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2026-03-08
Primary Topic: Ferroelectric and Negative Capacitance Devices
Type: article
Field-Weighted Citation Impact: 0.00

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article

(Anti)Ferroelectric HfZrO2: from non volatile memory to energy storage applications

I. C. Infante, Damien Deleruyelle, Jordan Bouaziz, Bertrand Vilquin et al.

Mar 8, 2026

SPIRE - Sciences Po Institutional REpository

Ferroelectric and Negative Capacitance Devices

article

(Anti)Ferroelectric HfZrO2: from non volatile memory to energy storage applications

I. C. Infante, Damien Deleruyelle, Jordan Bouaziz, Bertrand Vilquin, Martine Le Berre, S. Gonzalez, Alhada Kevin, Grégoire Magagnin, Brice Gautier

March 8, 2026article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Institut des Nanotechnologies de Lyon (FR), Sorbonne Université (FR), Institut des NanoSciences de Paris (FR), Institut National des Sciences Appliquées de Lyon (FR)

Affordable and clean energy

Openalex Percentile: Top 23%

Ferroelectric and Negative Capacitance Devices

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