Subtractive Nanofluidics in 65-nm CMOS Copper BEOL Achieve 100-nm Width
This paper presents the first implementation of 100-nm-wide nanofluidics in a 65-nm CMOS chip using a one-step wet-etch to remove the copper routing from the back-end-of-line (BEOL) while maintaining transistor integrity through continuous monitoring of the I<sub>DS</sub>-V<sub>GS</sub> characteristics. Vertical fluidics are also successfully demonstrated by etching through 360 nm × 360 nm-sized vias. A non-destructive laser microscopy technique for imaging fluidic channels at a dimension below the visible-light wavelength is developed.
Authors
- Alexander Di
- Jun-Chau Chien
- Michael Pedowitz
Institutions
- University of California, Berkeley (US)
Publication Details
- Published
- 2026-01-25
- DOI
- https://doi.org/10.1109/mems64181.2026.11419275
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00