Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers

Silicon carbide (SiC) is the leading wide bandgap semiconductor for high-power and high-temperature electronics, but the high defect density still limits device performance. This study investigates how inclusions, Basal Plane Dislocations (BPDs), and Threading Screw Dislocations (TSDs) in 4H-SiC substrates affect epitaxial defect formation. Twenty 200 mm SiC wafers were analyzed after epitaxial growth in two industrial Chemical Vapor Deposition (CVD) reactors, one using Trichlorosilane/Ethylene (Reactor A) and the other Silane/Propane (Reactor B). Defects were characterized using Candela (KLA), Altair (KLA), XRTmicron LAB (Rigaku), SICA (Lasertec), and Crossbeam (ZEISS) dual-beam SEM system. Statistical correlation showed that the conversion rate of embedded particles decreases with particle depth and increases with particle size. Reactor A exhibited lower propagation rates, indicating better suppression of substrate-related defects. SEM/FIB-EDX analyses suggested that carbon inclusions generate pits while metallic inclusions induce triangular defects. Dislocation analysis confirmed a strong correlation between TSDs and BPDs with carrots and triangular defects. BPD conversion rates were estimated at about 98.3% (Reactor A) and 99.8% (Reactor B). These results emphasize the importance of substrate quality and buffer layer optimization to minimize defect propagation.