Resonant light manipulation with the GaAs nanopillar array for green band applications

In recent years, the optical resonance effects of semiconductor nanostructures have been widely applied in high-performance optoelectronic devices as an important mean of light modulation. To address the urgent demand for efficient optoelectronic devices in underwater green-light detection, the optimal structure was first obtained through simulation in this study and exhibits a consistently high resonant absorption efficiency within the green band, reaching up to 97% at the resonance peak. Based on this, the GaAs nanopillar array with uniform morphology and excellent large-area uniformity was fabricated via electron-beam lithography and inductively coupled plasma etching, followed by optical performance verification. Optical measurements and simulation results demonstrate that the array suppresses reflectance to approximately 3% in the green band by exciting Mie resonances, thereby demonstrating its substantial potential for applications in green-light optoelectronic devices.