Dirac Surface‐State Driven Broad Spectral Band Low Quantum Energy Photoresponse in Quaternary Topological BiSbSe <sub>2</sub> Te
2D topological materials are garnering significant interest for their potential in optoelectronic applications, particularly due to their unique quantum transport properties and exceptional optical characteristics. In this work, quaternary topological BiSbSe<sub>2</sub>Te with stoichiometry modulation from Bi<sub>2</sub>Se<sub>3</sub> are synthesized and demonstrates a broad spectral band photoresponse, ranging from infrared to terahertz and to millimeter waves, with a particular excellence on detection of low quantum energy photons. The observed photoresponse is attributed to the excitation of plasmonic nonequilibrium electrons originating from the topological Dirac surface states inherent in the BiSbSe<sub>2</sub>Te. The detector exhibits remarkable performance, achieving a responsivity of 8174 V/W and a noise equivalent power of 4.7 × 10<sup>-</sup> <sup>1</sup> <sup>3</sup> W/Hz<sup>1/2</sup> at 0.094 THz, with a wide low quantum energy terahertz and millimeter wave photoresponse spanning from 0.032 to 0.173 THz. The study underscores the potential of Dirac surface-state driven photoresponse in BiSbSe<sub>2</sub>Te, paving the way for the development of sensitive, broad spectral band and room-temperature low quantum energy photodetectors, which are highly pursued for a variety of applications.
Authors
- Boyu Yang
- Junhui Ran (ORCID: https://orcid.org/0000-0002-5589-4908)
- T. T. Zhang
- Jiantian Zhang
- Yanling Chen (ORCID: https://orcid.org/0000-0003-1603-9121)
- Ping Yu (ORCID: https://orcid.org/0000-0002-8461-1188)
- T. Q. Huang
- Hao Luo
- Jianlu Wang
- Jinchao Tong
- Liujiang Zhou
- Xin Chen
- Luo Yan
- Ning Dai
- Junhao Chu
Institutions
- Central South University (CN)
- University of Electronic Science and Technology of China (CN)
- Sun Yat-sen University (CN)
- Hunan University (CN)
- San’an Optoelectronics (China) (CN)
- Shanghai Institute of Technical Physics (CN)
- Institute for Advanced Study (DE)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Advanced Science
- Published
- 2026-03-12
- DOI
- https://doi.org/10.1002/advs.202522592
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00