Synergistic Optimization of <i>n</i> -Type PbTe via Resonant Level and Strain-Induced Phonon Scattering for High-Efficiency Thermoelectric Modules
PbTe stands as a leading <i>n</i>-type thermoelectric material for midtemperature applications, yet its performance is limited by a single conduction valley and high lattice thermal conductivity. To address these constraints, we propose a combined strategy integrating resonant level engineering with dislocation engineering. Precise Br codoping positions the Fermi level to maximize the resonant level effect from In, while Ge alloying introduces a substantial strain field for enhanced phonon scattering. The optimized composition, Pb<sub>0.96</sub>In<sub>0.01</sub>Ge<sub>0.03</sub>Te<sub>0.988</sub>Br<sub>0.012</sub>, achieves a peak <i>zT</i> of ∼1.4 at 773 K. A fabricated module utilizing this material demonstrates a conversion efficiency of 10.5% under a 550 K temperature difference, ranking among the highest for PbTe-based modules. This work successfully bridges high-performance material design with practical device efficiency, offering a viable path for advancing thermoelectric technology.
Authors
- Jian Feng (ORCID: https://orcid.org/0000-0002-3794-1176)
- Huilie Shi
- Jianfeng Cai (ORCID: https://orcid.org/0000-0002-4838-0175)
- Yao Luo (ORCID: https://orcid.org/0000-0001-7492-2276)
- Guoqiang Liu
- Zongwei Zhang
- Jun Jiang
- Yan Liu
- Peng Sun
- Xiaojian Tan
Institutions
- Ningbo University (CN)
- Chinese Academy of Sciences (CN)
- University of Chinese Academy of Sciences (CN)
- Ningbo Institute of Industrial Technology (CN)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2026-03-12
- DOI
- https://doi.org/10.1021/acsami.5c23313
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00