Effect of Lapping Parameters on Material Removal Rate and Surface Roughness of GaN (0001) Plane

As a critical pretreatment process for chemical and mechanical polishing (CMP), the lapping roughness of gallium nitride (GaN) crystals directly influences the outcome of subsequent polishing and the reliability of final devices. This study systematically investigates the key factors affecting the lapping performance of GaN single crystals, focusing on abrasive type, particle size, and spindle speed, and elucidates their mechanisms in regulating material removal rate (MRR) and surface roughness. Using a micro-thickness gauge and controlled variable method, the material removal depth of the (0001) plane of GaN was accurately measured. The results show that the MRR increases with the increase in abrasive particle size within a certain range, albeit at the cost of increased surface roughness. Meanwhile, the spindle speed and MRR exhibit a positive correlation under specific conditions. Considering these lapping parameters, a balance between high MRR and controlled roughness can be achieved, providing a technical foundation for efficient and precise lapping of GaN crystals and facilitating the fabrication of GaN-based devices.