3D simulation of charge defect impacto in an industrial 28nm FD-SOI quantum dot

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SPIRE - Sciences Po Institutional REpository
Published
2025-05-14
Primary Topic
Semiconductor Quantum Structures and Devices
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article
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article

3D simulation of charge defect impacto in an industrial 28nm FD-SOI quantum dot

Pericles Philippopoulos, Philippe Galy, Eva Dupont-Ferrier, S. Mir et al.
SPIRE - Sciences Po Institutional REpository
Semiconductor Quantum Structures and Devices
article

3D simulation of charge defect impacto in an industrial 28nm FD-SOI quantum dot

Pericles Philippopoulos, Philippe Galy, Eva Dupont-Ferrier, S. Mir, Benjamin Bureau, Félix Beaudoin
article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Université de Sherbrooke (CA), Techniques of Informatics and Microelectronics for Integrated Systems Architecture (FR), Nanoacademic Technologies (CA), Institut quantique (CA)
Industry, innovation and infrastructure
Openalex Percentile: Top 26%
Semiconductor Quantum Structures and Devices
OpenAlex
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3D simulation of charge defect impacto in an industrial 28nm FD-SOI quantum dot — Pericles Philippopoulos, Philippe Galy, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS