Optoelectronic synapse based on a BiI3/Bi2Se3 van der Waals heterostructure for neuromorphic visions

In this paper, we demonstrate a fully optical neuromorphic vision sensor based on a BiI3/Bi2Se3 van der Waals heterostructure grown by sequential vapor deposition. High-quality vdW epitaxy produces strongly c axis-oriented BiI3 on Bi2Se3, forming a type-I band alignment and interfacial charge accumulation layer. This architecture suppresses dark current by one order of magnitude compared with pristine Bi2Se3 while generating intense persistent photoconductivity across visible-to-near-infrared wavelengths, an intrinsic, gate-free nonvolatile memory effect that directly enables synaptic plasticity. Using only optical pulses, a single two-terminal device faithfully emulates paired-pulse facilitation, short- to long-term plasticity transition, wavelength- and timing-dependent axon-multi-synapse integration, and frequency-dependent image memorization with controllable forgetting. These results establish the BiI3/Bi2Se3 heterostructure as a promising platform for broadband neuromorphic vision.

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Publication Details

Journal
Applied Physics Letters
Published
2026-03-09
DOI
https://doi.org/10.1063/5.0316774
Primary Topic
2D Materials and Applications
Type
article
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article

Optoelectronic synapse based on a BiI3/Bi2Se3 van der Waals heterostructure for neuromorphic visions

Yun Meng, Xinman Chen, Hong Zhou, Fuqiang Wen
Applied Physics Letters
2D Materials and Applications
article

Optoelectronic synapse based on a BiI3/Bi2Se3 van der Waals heterostructure for neuromorphic visions

Yun Meng, Xinman Chen, Hong Zhou, Fuqiang Wen
article en

Abstract

In this paper, we demonstrate a fully optical neuromorphic vision sensor based on a BiI3/Bi2Se3 van der Waals heterostructure grown by sequential vapor deposition. High-quality vdW epitaxy produces strongly c axis-oriented BiI3 on Bi2Se3, forming a type-I band alignment and interfacial charge accumulation layer. This architecture suppresses dark current by one order of magnitude compared with pristine Bi2Se3 while generating intense persistent photoconductivity across visible-to-near-infrared wavelengths, an intrinsic, gate-free nonvolatile memory effect that directly enables synaptic plasticity. Using only optical pulses, a single two-terminal device faithfully emulates paired-pulse facilitation, short- to long-term plasticity transition, wavelength- and timing-dependent axon-multi-synapse integration, and frequency-dependent image memorization with controllable forgetting. These results establish the BiI3/Bi2Se3 heterostructure as a promising platform for broadband neuromorphic vision.

Applied Physics LettersVol. 128(10)
Hunan University (CN), South China Normal University (CN)
Openalex Percentile: Top 30%
2D Materials and Applications
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