Comprehensive first-principles studies of structural, dynamical, elastic, electronic, thermoelectric, and thermodynamic properties of Half-Heusler TiGaAu compound

The structural, elastic, electronic, dynamical, thermoelectric (TE), and thermodynamic properties of Half-Heusler (HH) TiGaAu compound with valence electron count (VEC) of 8, are investigated using first-principles density functional theory (DFT) in conjunction with BoltzTraP2 transport modeling. The Type 1 nonmagnetic phase’s optimized cubic structure meets the Born mechanical stability requirements and its dynamical stability, which is confirmed by the phonon dispersion’s lack of imaginary frequencies. Due to the presence of a heavy Au atom, TiGaAu exhibits pronounced elastic anisotropy and is mechanically strong, stiff, and ductile according to elastic constants. With a moderate band gap, 0.681[Formula: see text]eV (mBJ-GGA), the electronic band structure favors balanced electron–hole transport and reveals an indirect semiconductor character. Thermoelectric analysis reveals that TiGaAu has competitive values up to 900[Formula: see text]K and high Seebeck coefficients exceeding 1000[Formula: see text][Formula: see text]V[Formula: see text]K[Formula: see text] at room temperature, with p-type carriers performing marginally better. Effective carrier transport and advantageous band convergence are reflected in the power factor’s steady temperature increase. Though mBJ-GGA predicts somewhat higher Seebeck and power factor values at higher temperatures — an improvement ascribed to its more accurate description of electronic structure — the results obtained using GGA and mBJ–GGA are consistent across the whole range. Furthermore, an excellent thermal stability and moderate lattice softening are confirmed by the smooth variation of temperature- and pressure-dependent thermodynamic properties, including heat capacities, entropy, thermal expansion coefficient, Debye temperature and Grüneisen parameter. TiGaAu is a promising option for high-temperature energy conversion applications as it combines a strong mechanical resilience, stable lattice dynamics and efficient thermoelectric behavior.

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Publication Details

Journal
Modern Physics Letters B
Published
2026-03-07
DOI
https://doi.org/10.1142/s0217984926500600
Primary Topic
Heusler alloys: electronic and magnetic properties
Type
article
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article

Comprehensive first-principles studies of structural, dynamical, elastic, electronic, thermoelectric, and thermodynamic properties of Half-Heusler TiGaAu compound

Sid Ahmed Bendella, N. Belmiloud, Friha Khelfaoui, S. Azzi et al.
Modern Physics Letters B
Heusler alloys: electronic and magnetic properties
article

Comprehensive first-principles studies of structural, dynamical, elastic, electronic, thermoelectric, and thermodynamic properties of Half-Heusler TiGaAu compound

Sid Ahmed Bendella, N. Belmiloud, Friha Khelfaoui, S. Azzi, Fadila Belkharroubi, Raghed Belbachir, Rabea Rahmani, Fatima Sidjilani, Yarub Al-Douri, Adel Abdellah El Hadj
article en

Abstract

The structural, elastic, electronic, dynamical, thermoelectric (TE), and thermodynamic properties of Half-Heusler (HH) TiGaAu compound with valence electron count (VEC) of 8, are investigated using first-principles density functional theory (DFT) in conjunction with BoltzTraP2 transport modeling. The Type 1 nonmagnetic phase’s optimized cubic structure meets the Born mechanical stability requirements and its dynamical stability, which is confirmed by the phonon dispersion’s lack of imaginary frequencies. Due to the presence of a heavy Au atom, TiGaAu exhibits pronounced elastic anisotropy and is mechanically strong, stiff, and ductile according to elastic constants. With a moderate band gap, 0.681[Formula: see text]eV (mBJ-GGA), the electronic band structure favors balanced electron–hole transport and reveals an indirect semiconductor character. Thermoelectric analysis reveals that TiGaAu has competitive values up to 900[Formula: see text]K and high Seebeck coefficients exceeding 1000[Formula: see text][Formula: see text]V[Formula: see text]K[Formula: see text] at room temperature, with p-type carriers performing marginally better. Effective carrier transport and advantageous band convergence are reflected in the power factor’s steady temperature increase. Though mBJ-GGA predicts somewhat higher Seebeck and power factor values at higher temperatures — an improvement ascribed to its more accurate description of electronic structure — the results obtained using GGA and mBJ–GGA are consistent across the whole range. Furthermore, an excellent thermal stability and moderate lattice softening are confirmed by the smooth variation of temperature- and pressure-dependent thermodynamic properties, including heat capacities, entropy, thermal expansion coefficient, Debye temperature and Grüneisen parameter. TiGaAu is a promising option for high-temperature energy conversion applications as it combines a strong mechanical resilience, stable lattice dynamics and efficient thermoelectric behavior.

Modern Physics Letters B
Piri Reis University (TR), Université Oran 1 Ahmed Ben Bella (DZ), Université des Sciences et de la Technologie d'Oran Mohamed Boudiaf (DZ), University of Malaya (MY), Emir Abdelkader University of Islamic Sciences (DZ), Université de Saida Dr.Moulay Tahar (DZ)
Affordable and clean energy
Openalex Percentile: Top 30%
Heusler alloys: electronic and magnetic properties
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