Reconfigurable monolithic photonic circuit on III-nitride chip

With respect to a III-nitride monolithic photonic circuit comprising multiple quantum well (MQW) diodes, InGaN/GaN MQW transmitters/boosters convert pulse optical signals into emitted light, whereas MQW modulators/receivers/monitors transform modulated shorter-wavelength photons into electronic signals. Here, five MQW diodes are interconnected via optical waveguides on a single III-nitride monolithic photonic chip, with an operating wavelength range of 385–416 nm. By integrating functional circuits with a time-division multiplexing (TDM) scheme, the light-emitting and light-detecting functionalities of these MQW diodes can be dynamically redefined, enabling a reconfigurable optical communication architecture. Each equipotential and fully mapped node serves as a core technology for scalable on-chip optical networks, allowing the reconfigurable III-nitride photonic chip and TDM scheme to integrate additional MQW components seamlessly.