AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational autoencoder

Deep reactive ion etching (DRIE) is critical for fabricating high-aspect-ratio structures in microelectromechanical systems (MEMS), yet its complex, parameter-dependent process poses significant optimization challenges. Artificial intelligence (AI) offers an efficient optimization solution, but its implementation faces the technical challenge of acquiring large-scale data from scanning electron microscopy (SEM) images, the standard for evaluating DRIE etching outcomes. Traditional SEM analysis relies on labor-intensive manual methods, incurring 15-20% errors and hindering high-throughput manufacturing. Existing automated methods, such as CNNs and SVMs, falter with 70-80% accuracy in noisy SEM images, failing to capture the dynamic evolution of etched structures. To address these limitations, we propose a physics-constrained variational level set autoencoder (VLSet-AE) for automated SEM sectional-profile analysis. By integrating physical etching constraints and a three-dimensional framework (time, linewidth, etching depth), VLSet-AE achieves precise contour recognition and nine critical dimensions extraction-scallop depth (2.29%), scallop width (peak-to-peak: 2.05%, valley-to-valley: 6.28%), scallop radius (4.69%), profile angle (0.56%), trench depth (5.46%), bow width (4.35%), mid width (2.43%), and bottom width (4.78%)-with an average error of 3.65% an overall model accuracy of 94.3%, significantly outperforming manual annotation and state-of-the-art alternatives. Compared to seven current models (e.g., CNNs, LSTMs, ResNet), VLSet-AE achieves the shortest training time (20 s), fastest inference time (1.2 s), highest recognition accuracy (96%), and competitive memory usage (50 MB) and parameter count (4.0 million). By enabling efficient, large-scale data acquisition for AI-optimized DRIE processes, VLSet-AE empowers scalable, intelligent manufacturing, unlocking the potential for advanced microfabrication technologies. This approach provides a forward-looking framework for AI-driven MEMS process design and manufacturing, delivering innovative solutions for future AI-assisted microfabrication advancements.

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Publication Details

Journal
Microsystems & Nanoengineering
Published
2026-03-09
DOI
https://doi.org/10.1038/s41378-025-01105-z
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
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article

AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational autoencoder

Kun Sun, Hui Yu, Yechen Miao, Heng Yang et al.
Microsystems & Nanoengineering
Advanced MEMS and NEMS Technologies
article

AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational autoencoder

Kun Sun, Hui Yu, Yechen Miao, Heng Yang, Yi Sun, Xinxin Li, Fang Wang
article en

Abstract

Deep reactive ion etching (DRIE) is critical for fabricating high-aspect-ratio structures in microelectromechanical systems (MEMS), yet its complex, parameter-dependent process poses significant optimization challenges. Artificial intelligence (AI) offers an efficient optimization solution, but its implementation faces the technical challenge of acquiring large-scale data from scanning electron microscopy (SEM) images, the standard for evaluating DRIE etching outcomes. Traditional SEM analysis relies on labor-intensive manual methods, incurring 15-20% errors and hindering high-throughput manufacturing. Existing automated methods, such as CNNs and SVMs, falter with 70-80% accuracy in noisy SEM images, failing to capture the dynamic evolution of etched structures. To address these limitations, we propose a physics-constrained variational level set autoencoder (VLSet-AE) for automated SEM sectional-profile analysis. By integrating physical etching constraints and a three-dimensional framework (time, linewidth, etching depth), VLSet-AE achieves precise contour recognition and nine critical dimensions extraction-scallop depth (2.29%), scallop width (peak-to-peak: 2.05%, valley-to-valley: 6.28%), scallop radius (4.69%), profile angle (0.56%), trench depth (5.46%), bow width (4.35%), mid width (2.43%), and bottom width (4.78%)-with an average error of 3.65% an overall model accuracy of 94.3%, significantly outperforming manual annotation and state-of-the-art alternatives. Compared to seven current models (e.g., CNNs, LSTMs, ResNet), VLSet-AE achieves the shortest training time (20 s), fastest inference time (1.2 s), highest recognition accuracy (96%), and competitive memory usage (50 MB) and parameter count (4.0 million). By enabling efficient, large-scale data acquisition for AI-optimized DRIE processes, VLSet-AE empowers scalable, intelligent manufacturing, unlocking the potential for advanced microfabrication technologies. This approach provides a forward-looking framework for AI-driven MEMS process design and manufacturing, delivering innovative solutions for future AI-assisted microfabrication advancements.

Microsystems & NanoengineeringVol. 12(1)
Chinese Academy of Sciences (CN), State Key Laboratory of Transducer Technology (CN), Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN)
Decent work and economic growth
Openalex Percentile: Top 30%
Advanced MEMS and NEMS Technologies
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