INFLUENCE OF RADIATION DEFECTS ON PBTE SEMICONDUCTOR FILMS IMPLANTED WITH (AR+) IONS

Semiconductor PbTe films were obtained by discrete evaporation and were block single crystals oriented with the “///” axis perpendicular to the layer plane. During ion bombardment of PbTe with Ar+ ions, the energy of atoms was E=90 keV, the current density during implantation γ=0.5…..1 μA/cm2, the integral dose of irradiation varied from 10 μC/cm2 (6.2∙1013 cm-2 ) up to 900 µC/cm2 (5.6∙1015 cm-2). In terms of the volume unit of the PbTe film, the concentration of implanted atoms ranged from 1.3∙1018cm-3 to 1.5∙1020cm-3.The main result of bombardment with argon ions is a change in the type of conductivity (the sign of the Hall coefficients R and thermopower α) from hole to electron.