Density Functional Theory Study of Electronic Structure and Optical Properties of W-Doped γ-Bi2MoO6

We employed density functional theory (DFT) to investigate the effect of tungsten (W) doping on the crystal structure, electronic properties, and optical response of Bi2MoO6−xWxO6. The results show that W doping retains the Aurivillius orthorhombic lattice structure while inducing localized distortions. All doping systems retain semiconductor characteristics with a band gap ranging from 2.11 to 2.26 eV. The valence band is mainly composed of O-2p orbitals, while the conduction band consists of Mo-4d and W-5d states. As W doping increases, the influence of W-5d states near the conduction band edge intensifies, modulating the electronic structure. Optical calculations show that W doping shifts the absorption edge and allows for precise adjustment of the absorption threshold in the visible light range. These findings provide insight into how W doping affects the electronic and optical properties of γ-Bi2MoO6 and offer a theoretical basis for improving Bi2MoO6-based photocatalytic materials.

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Publication Details

Journal
Coatings
Published
2026-03-09
DOI
https://doi.org/10.3390/coatings16030338
Primary Topic
Advanced Photocatalysis Techniques
Type
article
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article

Density Functional Theory Study of Electronic Structure and Optical Properties of W-Doped γ-Bi2MoO6

Xuan Gao, Nan Dong, Shiheng Xin, Shiping Li et al.
Coatings
Advanced Photocatalysis Techniques
article

Density Functional Theory Study of Electronic Structure and Optical Properties of W-Doped γ-Bi2MoO6

Xuan Gao, Nan Dong, Shiheng Xin, Shiping Li, Suqin Xue, Fuchun Zhang, Yaru Chen, Yuge Peng, Xinrui Cao
article en

Abstract

We employed density functional theory (DFT) to investigate the effect of tungsten (W) doping on the crystal structure, electronic properties, and optical response of Bi2MoO6−xWxO6. The results show that W doping retains the Aurivillius orthorhombic lattice structure while inducing localized distortions. All doping systems retain semiconductor characteristics with a band gap ranging from 2.11 to 2.26 eV. The valence band is mainly composed of O-2p orbitals, while the conduction band consists of Mo-4d and W-5d states. As W doping increases, the influence of W-5d states near the conduction band edge intensifies, modulating the electronic structure. Optical calculations show that W doping shifts the absorption edge and allows for precise adjustment of the absorption threshold in the visible light range. These findings provide insight into how W doping affects the electronic and optical properties of γ-Bi2MoO6 and offer a theoretical basis for improving Bi2MoO6-based photocatalytic materials.

CoatingsVol. 16(3)
Inner Mongolia University (CN), Yan'an University (CN)
Openalex Percentile: Top 33%
Advanced Photocatalysis Techniques
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Density Functional Theory Study of Electronic Structure and Optical Properties of W-Doped γ-Bi2MoO6 — Xuan Gao, Nan Dong, et al. · Coatings (2026) | TGRS Research Map | TGRS