Activation‐Integrated and Memory‐Assisted Dynamic‐Latch Quantizer for Variation‐Tolerant and Low‐Energy Neuromorphic Computing
Analog‐to‐digital converters (ADCs) remain the dominant area/energy bottleneck in neuromorphic computing (NC) systems. In this work, we propose a dynamic latch–based memory‐assisted ADC that integrates charge‐trap flash (CTF) memory cells to achieve highly compact and energy‐efficient operation. Memory‐assisted dynamic‐latch ADC that embeds a CTF cell in the differential comparator, turning the threshold into a nonvolatile, electrically programable parameter and reusing it to perform in‐ADC nonlinear activation. The 4‐bit ADC tunes its switching point with 10 mV resolution via selective program/erase, exhibits mean DNL = 0.07 LSB, and operates stably up to 100°C. At 500 nm, a unit‐bit conversion requires ∼15 ns and ∼220 fJ per precharge‐and‐evaluate cycle, while scaling to 32 nm reduces the latency to ∼26 ps and the energy to ∼690 aJ. Benchmarks confirm that the proposed ADC achieves superior energy and area efficiency compared to prior designs, establishing it as a compact and viable solution for NC systems.
Authors
- Jonghyun Ko
- Jiseong Im (ORCID: https://orcid.org/0000-0002-7260-9224)
- Sung‐Ho Park
- Ryun‐Han Koo
- Jong‐Ho Lee
Institutions
- Seoul National University (KR)
- Seoul Semiconductor (South Korea) (KR)
Publication Details
- Journal
- Advanced Intelligent Systems
- Published
- 2026-03-08
- DOI
- https://doi.org/10.1002/aisy.202501499
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00