Activation‐Integrated and Memory‐Assisted Dynamic‐Latch Quantizer for Variation‐Tolerant and Low‐Energy Neuromorphic Computing

Analog‐to‐digital converters (ADCs) remain the dominant area/energy bottleneck in neuromorphic computing (NC) systems. In this work, we propose a dynamic latch–based memory‐assisted ADC that integrates charge‐trap flash (CTF) memory cells to achieve highly compact and energy‐efficient operation. Memory‐assisted dynamic‐latch ADC that embeds a CTF cell in the differential comparator, turning the threshold into a nonvolatile, electrically programable parameter and reusing it to perform in‐ADC nonlinear activation. The 4‐bit ADC tunes its switching point with 10 mV resolution via selective program/erase, exhibits mean DNL = 0.07 LSB, and operates stably up to 100°C. At 500 nm, a unit‐bit conversion requires ∼15 ns and ∼220 fJ per precharge‐and‐evaluate cycle, while scaling to 32 nm reduces the latency to ∼26 ps and the energy to ∼690 aJ. Benchmarks confirm that the proposed ADC achieves superior energy and area efficiency compared to prior designs, establishing it as a compact and viable solution for NC systems.

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Publication Details

Journal
Advanced Intelligent Systems
Published
2026-03-08
DOI
https://doi.org/10.1002/aisy.202501499
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
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article

Activation‐Integrated and Memory‐Assisted Dynamic‐Latch Quantizer for Variation‐Tolerant and Low‐Energy Neuromorphic Computing

Jonghyun Ko, Jiseong Im, Sung‐Ho Park, Ryun‐Han Koo et al.
Advanced Intelligent Systems
Advanced Memory and Neural Computing
article

Activation‐Integrated and Memory‐Assisted Dynamic‐Latch Quantizer for Variation‐Tolerant and Low‐Energy Neuromorphic Computing

Jonghyun Ko, Jiseong Im, Sung‐Ho Park, Ryun‐Han Koo, Jong‐Ho Lee
article en

Abstract

Analog‐to‐digital converters (ADCs) remain the dominant area/energy bottleneck in neuromorphic computing (NC) systems. In this work, we propose a dynamic latch–based memory‐assisted ADC that integrates charge‐trap flash (CTF) memory cells to achieve highly compact and energy‐efficient operation. Memory‐assisted dynamic‐latch ADC that embeds a CTF cell in the differential comparator, turning the threshold into a nonvolatile, electrically programable parameter and reusing it to perform in‐ADC nonlinear activation. The 4‐bit ADC tunes its switching point with 10 mV resolution via selective program/erase, exhibits mean DNL = 0.07 LSB, and operates stably up to 100°C. At 500 nm, a unit‐bit conversion requires ∼15 ns and ∼220 fJ per precharge‐and‐evaluate cycle, while scaling to 32 nm reduces the latency to ∼26 ps and the energy to ∼690 aJ. Benchmarks confirm that the proposed ADC achieves superior energy and area efficiency compared to prior designs, establishing it as a compact and viable solution for NC systems.

Advanced Intelligent Systems
Seoul National University (KR), Seoul Semiconductor (South Korea) (KR)
Affordable and clean energy
Openalex Percentile: Top 30%
Advanced Memory and Neural Computing
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