From binary to quinary: The rationale and development of GaInAsSbBi for mid- and long-wave infrared sensing applications
Given the added complexity in flux calibration and composition evaluation inherent to quinary alloy growth, what motivates compounding the challenges of III–V-Bi growth with the goal of producing a quinary alloy of GaInAsSbBi for mid- and long-wave infrared sensing applications? Each elemental constituent provides some additional design freedom to achieve the ultimate goal of producing a lattice-matched, bulk random alloy mid-wave infrared III–V material with smooth surface morphology and high optoelectronic quality to enable high performance elevated operating temperatures. This paper reviews the evolution of Bi-containing semiconductor research, focusing on mid- and long-wave infrared materials and highlighting key research findings that motivated the decisions to accept the added complexity in going from binaries like InAs or InSb, to InAsBi, to InAsSbBi, and, finally, to GaInAsSbBi to meet the performance demands of advanced infrared sensing applications.
Authors
- Joshua M. Duran (ORCID: https://orcid.org/0000-0001-9384-0516)
- A. T. Newell (ORCID: https://orcid.org/0000-0002-9819-1268)
- Gamini Ariyawansa (ORCID: https://orcid.org/0000-0002-8933-6920)
- Aaron J. Muhowski (ORCID: https://orcid.org/0000-0002-5659-6136)
- Zinah M. Alsaad (ORCID: https://orcid.org/0009-0002-7125-1889)
- Marko S. Milosavljevic (ORCID: https://orcid.org/0000-0003-2697-4172)
- Julie V. Logan (ORCID: https://orcid.org/0000-0001-9787-5249)
- S. R. Johnson (ORCID: https://orcid.org/0000-0002-2148-015X)
- Rigo A. Carrasco (ORCID: https://orcid.org/0000-0002-5908-3803)
- Diana Maestas (ORCID: https://orcid.org/0000-0002-3291-8655)
- Ganesh Balakrishnan
- C. P. Morath
- P. T. Webster
Institutions
- United States Air Force Research Laboratory (US)
- University of New Mexico (US)
- Wright-Patterson Air Force Base (US)
- Kirtland Air Force Base (US)
- Sandia National Laboratories (US)
- Arizona State University (US)
Publication Details
- Journal
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
- Published
- 2026-03-09
- DOI
- https://doi.org/10.1116/6.0005345
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00