Ultra Low Jitter Wideband Frequency Synthesizer With Gain‐Enhanced PFD

ABSTRACT In this paper, we present a frequency synthesizer based on fractional‐N CP‐PLL architecture to achieve continuous frequency coverage from 6 to 24 GHz. To address the problem of modulator folded quantization noise deteriorating the phase noise performance of the PLL, a gain‐enhanced PFD is proposed to improve the CP charge pump linearity. The chip is fabricated in a 0.18‐m SiGe BiCMOS process and the measurement results show that the phase noise from 12.01 GHz carrier is −110.9 dBc/Hz at 100 kHz offset, which is a 26 dB decrease in the in‐band phase noise compared to that when using a conventional PFD. With the gain‐enhanced PFD optimizing phase noise, an RMS jitter of 77.6 fs (integrated from 12 kHz to 20 MHz) and a reference spur of −69.6 dBc at the 12.01 GHz carrier are achieved. The chip operates on an 3.3 V supply with a DC power consumption of 528 mW.

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Publication Details

Journal
Microwave and Optical Technology Letters
Published
2026-02-23
DOI
https://doi.org/10.1002/mop.70521
Primary Topic
Advancements in PLL and VCO Technologies
Type
article
Field-Weighted Citation Impact
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article

Ultra Low Jitter Wideband Frequency Synthesizer With Gain‐Enhanced PFD

Q. Li, J. Li, Tao Zhang, Shize Duan et al.
Microwave and Optical Technology Letters
Advancements in PLL and VCO Technologies
article

Ultra Low Jitter Wideband Frequency Synthesizer With Gain‐Enhanced PFD

Q. Li, J. Li, Tao Zhang, Shize Duan, Hua Xu, Yanhui Wu, Zhenrong Li, Bo Yuan, Cong Li, Tianyu Deng
article en

Abstract

ABSTRACT In this paper, we present a frequency synthesizer based on fractional‐N CP‐PLL architecture to achieve continuous frequency coverage from 6 to 24 GHz. To address the problem of modulator folded quantization noise deteriorating the phase noise performance of the PLL, a gain‐enhanced PFD is proposed to improve the CP charge pump linearity. The chip is fabricated in a 0.18‐m SiGe BiCMOS process and the measurement results show that the phase noise from 12.01 GHz carrier is −110.9 dBc/Hz at 100 kHz offset, which is a 26 dB decrease in the in‐band phase noise compared to that when using a conventional PFD. With the gain‐enhanced PFD optimizing phase noise, an RMS jitter of 77.6 fs (integrated from 12 kHz to 20 MHz) and a reference spur of −69.6 dBc at the 12.01 GHz carrier are achieved. The chip operates on an 3.3 V supply with a DC power consumption of 528 mW.

Microwave and Optical Technology LettersVol. 68(3)
Xidian University (CN), Southwest Hospital (CN)
Affordable and clean energy
Openalex Percentile: Top 30%
Advancements in PLL and VCO Technologies
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