Toward Cost‐Effective and Facile Organic Passivation Strategies for SiC Surfaces

SiC‐based power electronic devices are attracting significant attention, but their development has been seriously hindered by substantial defects on the SiC surface. Traditional passivation approaches, such as oxidation and phosphorous or nitrogen‐based treatments, require high‐temperature conditions. These process not only involve technological complexities but also lead to the formation of carbon clusters (CC), which degrade interface quality and reduce carrier mobility. Therefore, the development of a fast and convenient surface passivation method operated at room or low temperatures is extremely important for current SiC materials R&D. Additionally, the surface recombination in SiC significantly impedes accurate measurement of its true bulk lifetime. Here, we present an organic passivation strategy for SiC surfaces, a simple solution‐processed approach that can be performed at room temperature under ambient atmospheric conditions. An excellent passivation effect has been achieved on the SiC surface, characterized by a reduced interface state density ( D it ) (6 × 10 10 cm −2 eV −1 ) and a minority carrier lifetime value of 18.4 ns. XPS characterization and the first‐principles calculations reveal that the passivation mechanism originates from the grafting reaction between oxygen atoms in the sulfonic group of polymer film molecules and the Si‐dangling bonds (Si‐DBs) and C‐dangling bonds (C‐DBs) on the SiC surfaces. These findings open a new pathway to simplify surface passivation process of SiC and reduce the manufacturing cost of SiC‐based devices, while also providing a convenient approach for characterizing the bulk lifetime of SiC materials.