Auger Parameter Analysis for TiN and AlN Thin Films via Combined In Situ XPS and HAXPES

ABSTRACT Auger parameter analysis provides in‐depth information about electronic and chemical bonding properties of TiN and AlN thin films, which are relevant across a wide range of technologies. Meaningful interpretation and analysis of Auger parameter of these materials have been hindered due to, among other reasons, the absence of reliable references. Here, we present a comprehensive study of Auger parameters for TiN and AlN thin films using a dual‐source lab‐based XPS/HAXPES system equipped with Al Kα and Cr Kα X‐ray sources. Due to a large spread of excitation X‐ray energy, bulk‐ and surface‐sensitive core‐level photoelectrons and Auger transitions are probed. This allows us to study a wide range of Auger and core level emission lines of TiN and AlN. These measurements can serve as references for further identification of chemical state changes, oxidation state, or any deviations in the local chemical environment in these materials. UHV sample transfer was employed to minimize surface contamination. Additionally, we demonstrate how common procedures such as ambient air exposure and Ar + sputter‐etching influence the Auger parameters, highlighting the importance of surface preparation in spectroscopic analysis.