Ga,Ti‐Doped Indium Oxide/PTFE Hybrid Films Enabling Stretchable Transparent Conductors for Wearable Devices

ABSTRACT Stretchable transparent conductors are key components for next‐generation wearable photoelectronics and sensors. Here, we present a novel hybrid conductor composed of a Ga, Ti co‐doped indium oxide (IGTO) and polytetrafluoroethylene (PTFE) blend deposited on a polyurethane (PU) substrate. Amorphous IGTO–PTFE mixed films were fabricated via co‐sputtering followed by ion beam treatment. The DC‐to‐RF power ratio effectively controlled the composition and microstructure of the hybrid films, thereby tuning their electrical, optical, and mechanical properties. The optimized IGTO–PTFE conductor exhibited high optical transmittance (up to 95% at 550 nm) and exceptional mechanical durability, maintaining electrical continuity under tensile strain up to 12.5%. Structural analyzes revealed a percolative network between the conductive IGTO and hydrophobic PTFE phases, enabling simultaneous conductivity and stretchability. Demonstrations in light‐emitting diode interconnects, capacitive touch sensors, and temperature sensors highlight the potential of the IGTO–PTFE hybrid as a promising platform for transparent, stretchable electrodes in wearable devices.