How substrate temperature and oxygen flow rate affect surface quality and ring structure of HfO2 film on SiO2 substrate

• Suppressing microscopic defects in films and substrates improves optical performance. • Heating condition weakens densification of fused silica surface in deposition process. • Reduced compressive stress of films on substrates results in weaker Raman intensity. • Elevated oxygen flux inhibits small-ring formation by stabilizing hydroxyl groups. Designing low-absorption HfO 2 optical thin-film components (OTCs) on fused silica substrates (FSS) for high-power laser systems remains challenging. Electron beam evaporation (EBE) can introduce micro-defects in the HfO 2 films and simultaneously alter the amorphous network of FSS, compromising optical performance. This work investigates how substrate temperature ( T ) and oxygen flow rate ( Q ) control the relationship among process, structure and properties of OTCs, and how these relationships can be utilized to guide OTC design. Reactive EBE is conducted under controlled T (23 ∼ 100 °C) and Q (140 ∼ 190 sccm). Film surface quality is quantified by AFM roughness ( Sa ), while the nanoscale FSS network is assessed by Raman spectroscopy. The resulting structure changes are validated at the property level using optical constants and weak absorption ( β ) at the wavelength of 1064 nm. The novelty lies in a systematic cross-scale correlation that explicitly links film-induced stress and morphology with the evolution of the substrate ring structure during EBE. This aspect has not been widely explored for HfO 2 /fused-silica OTCs. Increasing T reduces the average compressive stress from 112 to 95 MPa, lowers Sa by 24.2%, decreases the Raman intensity by 21.6%, and reduces β by 41.2% from 6.92 to 4.07 ppm. Increasing Q further stabilizes hydroxyl-related structures and suppresses unfavorable ring conversion, leading to additional reductions of 11.8% in Sa , 11.1% in Raman intensity, and 29.2% in β . These results provide a critical process-parameter design guideline for co-optimizing film morphology, substrate network structure, and low- β performance in high-reliability OTCs

Authors

Institutions

Publication Details

Journal
Materials & Design
Published
2026-03-07
DOI
https://doi.org/10.1016/j.matdes.2026.115808
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

How substrate temperature and oxygen flow rate affect surface quality and ring structure of HfO2 film on SiO2 substrate

qinghua zhang, Jianchong Li, Yaowei Wei, Xianghui Huang et al.
Materials & Design
Semiconductor materials and devices
article

How substrate temperature and oxygen flow rate affect surface quality and ring structure of HfO2 film on SiO2 substrate

qinghua zhang, Jianchong Li, Yaowei Wei, Xianghui Huang, Fei Zhang, Kai Ma, Mingjun Chen, Hongqin Lei, Liang Chen, Linjie Zhao, Jian Cheng
article en

Abstract

• Suppressing microscopic defects in films and substrates improves optical performance. • Heating condition weakens densification of fused silica surface in deposition process. • Reduced compressive stress of films on substrates results in weaker Raman intensity. • Elevated oxygen flux inhibits small-ring formation by stabilizing hydroxyl groups. Designing low-absorption HfO 2 optical thin-film components (OTCs) on fused silica substrates (FSS) for high-power laser systems remains challenging. Electron beam evaporation (EBE) can introduce micro-defects in the HfO 2 films and simultaneously alter the amorphous network of FSS, compromising optical performance. This work investigates how substrate temperature ( T ) and oxygen flow rate ( Q ) control the relationship among process, structure and properties of OTCs, and how these relationships can be utilized to guide OTC design. Reactive EBE is conducted under controlled T (23 ∼ 100 °C) and Q (140 ∼ 190 sccm). Film surface quality is quantified by AFM roughness ( Sa ), while the nanoscale FSS network is assessed by Raman spectroscopy. The resulting structure changes are validated at the property level using optical constants and weak absorption ( β ) at the wavelength of 1064 nm. The novelty lies in a systematic cross-scale correlation that explicitly links film-induced stress and morphology with the evolution of the substrate ring structure during EBE. This aspect has not been widely explored for HfO 2 /fused-silica OTCs. Increasing T reduces the average compressive stress from 112 to 95 MPa, lowers Sa by 24.2%, decreases the Raman intensity by 21.6%, and reduces β by 41.2% from 6.92 to 4.07 ppm. Increasing Q further stabilizes hydroxyl-related structures and suppresses unfavorable ring conversion, leading to additional reductions of 11.8% in Sa , 11.1% in Raman intensity, and 29.2% in β . These results provide a critical process-parameter design guideline for co-optimizing film morphology, substrate network structure, and low- β performance in high-reliability OTCs

Materials & DesignVol. 264
Shanghai Jiao Tong University (CN), Harbin Institute of Technology (CN), China Academy of Engineering Physics (CN)
Openalex Percentile: Top 31%
Semiconductor materials and devices
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.