Design of Optoelectronic Performance of Tunneling Field‐Effect Transistor‐Micro Light‐Emitting Diode Integrated Device

A gallium nitride (GaN)‐based integrated tunneling field‐effect transistor‐micro light‐emitting diode (TFET‐μLED) device is proposed in this article. By vertically integrating a TFET with a micro‐LED (μLED), this optoelectronic device achieved electro‐optical conversion, signal modulation, and efficient driving in a single structure. The introduction of an aluminum GaN graded heterojunction structure in the TFET source region enables strong bandgap engineering with GaN, significantly enhancing carrier injection efficiency under quantum tunneling effects while optimizing subthreshold swing (SS). Silvaco technology computer‐aided design (TCAD) simulations demonstrated that the proposed TFET‐μLED achieves an on/off current ratio exceeding 10 5 at a low driving voltage of 0.8 V. The simulation results showed superior power efficiency and nanosecond‐scale response speed compared to conventional metal‐oxide‐semiconductor field‐effect transistor (MOSFET)‐LED architectures. By optimizing the thickness and doping profile of the TFET channel layer, reverse leakage current was effectively suppressed, and carrier tunneling probability was improved, maintaining 92% quantum efficiency stability under 100 MHz high‐frequency operation. This integration scheme held significant potential for applications in miniaturized display systems, visible light communication chips, biomedical sensing, and ultralow power optoelectronic integrated circuits.