Adaptive Tuning Framework for MOSFET Gate Drive Parameters Based on PPO

The optimization of the MOSFET gate drive parameters is crucial for the trade-off between switching loss and electromagnetic interference (EMI). However, the nonlinear coupling among gate drive parameters, board-level parasitic, and switching performance limits the effectiveness of traditional MOSFET drive design methods. This paper proposes an adaptive tuning framework based on the proximal policy optimization (PPO) algorithm. An analytical switching model incorporating board-level parasitics is first derived to analyze the coupling between drive parameters and switching performance. The optimization problem is then formulated as a Markov decision process (MDP). Within this framework, domain randomization is applied during training. This enables the agent to learn a generalizable optimization strategy that remains robust across the varying parasitic inductances encountered in different PCB layouts. Compared to the traditional Non-dominated Sorting Genetic Algorithm II (NSGA-II), the proposed method uses the trained policy for direct inference. This reduces computation time by 98.7% while maintaining a multi-objective performance difference within 10.06%. In addition, hardware verification shows a 10.7% average deviation between the measured and simulated results. These results demonstrate that the proposed method provides an efficient and scalable solution for MOSFET gate drive optimization.