Reliability assessment of SMD tantalum capacitors for Active Implantable Medical Devices: A methodology based on ALT and DoE
The reliability of electronic components is a critical concern in Active Implantable Medical Devices (AIMDs). Among the most commonly used components in these devices, SMD tantalum capacitors have been identified as one of the most problematic due to their higher sensitivity to environmental stresses. To address this issue, this article proposes a methodology for a more appropriate qualification of these components with respect to the mission profile of AIMDs by combining Accelerated Life Testing (ALT) with Design of Experiments (DoE). A Failure Modes, Mechanisms, and Effects Analysis (FMMEA) is employed to identify the dominant stress factors (temperature, relative humidity, and electrical overstress) and the most significant technological factors (packaging technology, cathode material, size, and manufacturing process). A core part of the methodology is the estimation of a predictive reliability model enhanced through the use of statistical methods. This combined framework offers a more accurate and application-relevant assessment of tantalum capacitor reliability in AIMDs. • Methodology for mission-profile-based reliability assessment of SMD tantalum capacitors. • ALT combined with DoE, integrated with the knowledge of failure mechanisms. • Method for predictive reliability modeling using statistical analysis of ALT data. • Framework of relevant reliability assessment extensible to other component types.
Authors
- Laurent Saintis (ORCID: https://orcid.org/0000-0002-8634-815X)
- Hélène Marceau
- Fatima‐Ezahra Indmeskine (ORCID: https://orcid.org/0000-0002-3183-4310)
- Abdessamad Kobi (ORCID: https://orcid.org/0000-0003-4079-1989)
Institutions
- Hôpital Saint-Philibert (FR)
- Université d'Angers (FR)
Publication Details
- Journal
- Microelectronics Reliability
- Published
- 2026-03-05
- DOI
- https://doi.org/10.1016/j.microrel.2026.116089
- Primary Topic
- Electronic Packaging and Soldering Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00