Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack

NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage (<i>V</i><sub>th</sub>) degradation under ionizing radiation, causing reliability challenges for space and defense applications. Here we show that ferroelectric field-effect transistors (FeFETs) with laminated gate stacks offer a promising route to achieving radiation resilience in vertical NAND technology. We demonstrate that large-memory-window, vertical NAND-compatible laminated poly-silicon-channel FeFETs with an 8 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/3 nm Al<sub>2</sub>O<sub>3</sub>/8 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> stack retain a full memory window and robust switching up to 10 Mrad(air) of the total ionizing dose (TID). Programmed and erased states show negligible TID-induced drift after 1 Mrad(air), while only the erased state degrades by ∼2 V at 10 Mrad(air). Technology computer-aided design (TCAD) modeling attributes these asymmetric shifts to state-dependent traps. Compared to charge-trap NAND, laminated FeFETs exhibit ∼30-fold lower <i>V</i><sub>th</sub> degradation per unit dose, positioning them as superior radiation-resilient storage candidates.

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Publication Details

Journal
Nano Letters
Published
2026-03-05
DOI
https://doi.org/10.1021/acs.nanolett.5c05947
Primary Topic
Advanced Data Storage Technologies
Type
article
Field-Weighted Citation Impact
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article

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack

J.M. Chen, Dyutimoy Chakraborty, Lance Fernandes, Minji Shon et al.
Nano Letters
Advanced Data Storage Technologies
article

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack

J.M. Chen, Dyutimoy Chakraborty, Lance Fernandes, Minji Shon, Mengkun Tian, Salma Soliman, Andrea Padovani, Biswajit Ray, Sanghyun Kang, Priyankka Gundlapudi Ravikumar, Stuart E. Wodzro, Asif Khan, Minah Lee, Joan Adler, Shimeng Yu, Zekai Wang, Taeyoung Song, Prasanna Venkatesan, Jason Dean Yeager, Suman Datta, Douglas Wolfe
article en

Abstract

NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage (<i>V</i><sub>th</sub>) degradation under ionizing radiation, causing reliability challenges for space and defense applications. Here we show that ferroelectric field-effect transistors (FeFETs) with laminated gate stacks offer a promising route to achieving radiation resilience in vertical NAND technology. We demonstrate that large-memory-window, vertical NAND-compatible laminated poly-silicon-channel FeFETs with an 8 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/3 nm Al<sub>2</sub>O<sub>3</sub>/8 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> stack retain a full memory window and robust switching up to 10 Mrad(air) of the total ionizing dose (TID). Programmed and erased states show negligible TID-induced drift after 1 Mrad(air), while only the erased state degrades by ∼2 V at 10 Mrad(air). Technology computer-aided design (TCAD) modeling attributes these asymmetric shifts to state-dependent traps. Compared to charge-trap NAND, laminated FeFETs exhibit ∼30-fold lower <i>V</i><sub>th</sub> degradation per unit dose, positioning them as superior radiation-resilient storage candidates.

Nano LettersVol. 26(10)
University of Modena and Reggio Emilia (IT), Georgia Institute of Technology (US), Pennsylvania State University (US), Scientific Methods (United States) (US), Lister Institute of Preventive Medicine (GB), Colorado State University (US)
Affordable and clean energy
Openalex Percentile: Top 43%
Advanced Data Storage Technologies
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