Monte Carlo Simulation of Defect Formation in the Crystalline Structure of InAs Semiconductor on a Sapphire Substrate under Neutron Flux

The article is devoted to Monte Carlo simulation of the effect of a neutron flux on the crystalline structure of an InAs semiconductor on a sapphire substrate using the Geant4 and SRIM software packages. The list of generated secondary particles, their ranges, and the number of vacancies formed per ion are examined. On the basis of numerical modeling, conclusions are drawn about the placement of the semiconductor film during irradiation and the impact on its mechanical and electrical properties.