A new material for the electron-blocking layer of photonic devices

AlScN can be lattice-matched to GaN and integrated into blue light-emitting diodes as the electron blocking layer

Authors

Publication Details

Journal
Scilight
Published
2026-03-03
DOI
https://doi.org/10.1063/10.0043009
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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article

A new material for the electron-blocking layer of photonic devices

Katherine De Lange
Scilight
GaN-based semiconductor devices and materials
article

A new material for the electron-blocking layer of photonic devices

Katherine De Lange
article en

Abstract

AlScN can be lattice-matched to GaN and integrated into blue light-emitting diodes as the electron blocking layer

ScilightVol. 2026(10)
Openalex Percentile: Top 36%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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A new material for the electron-blocking layer of photonic devices — Katherine De Lange · Scilight (2026) | TGRS Research Map | TGRS