Recent Progress of Millimeter-Wave Silicon-Based Integrated Mixers for Broadband Wireless Communication: A Comprehensive Survey

Mixers are integral components in RF circuits for frequency conversion and are present in almost all RF front-ends. The relentless advancement of mobile communication standards, particularly towards 5G-Advanced and 6G, imposes ever more stringent and multi-dimensional performance requirements on mixer design. While previous surveys have capably summarized mixer technologies, this review distinguishes itself by providing a comprehensive and critical examination of millimeter-wave and sub-THz silicon-based integrated mixers, with explicit coverage extended from core RF bands to beyond 170 GHz. We place particular emphasis on the unique challenges and trade-offs inherent to silicon (CMOS and SiGe BiCMOS) platforms at these high frequencies. This work first summarizes the structural frameworks and underlying principles of mixers, examines multiple mixer variants, and performs an in-depth analysis of their key performance characteristics, encompassing conversion gain, noise figure (with distinctions between single-sideband (SSB) and double-sideband (DSB) definitions), isolation, and related metrics. Then, it compares and discusses the design of several mixers, especially analyzing their innovative points and key technologies, while critically evaluating their inherent limitations and trade-offs. Furthermore, a dedicated section synthesizes the most recent research trends, including heterogeneous integration, AI/ML-assisted design, and mixer architectures for integrated sensing and communication (ISAC), thereby addressing a notable gap in the current literature. Finally, it concludes with an outlook on future challenges and opportunities for mixers in next-generation communication systems.