Spin–orbit torque-induced magnetization switching in electrochemically deposited CoPt oriented polycrystalline film

Current-induced spin–orbit torque (SOT) offers an efficient method of manipulating magnetization and is widely applied in emerging three-dimensional (3D) magnetic memory technologies. Electrochemical deposition presents a promising route for fabricating such 3D structures; yet, achieving high-quality magnetic films and spintronics phenomena remains challenging. Here, we demonstrate SOT in an electrochemically deposited 7.3 nm-thick CoPt thin film with strong perpendicular magnetic anisotropy, grown on a Pt seed layer, which serves as the spin source for this system. Accurate analysis of the SOT effective field using combined second-harmonic Hall measurements revealed the existence of SOT and its dependence on the magnetization angle. Furthermore, current-induced magnetization switching was achieved in a 2.8 nm-thick CoPt alloy film. This work unveils the potential of electrochemical deposition for next-generation 3D spintronics device applications.