Efficient and broadband metalens based coupling architecture for silicon photonics chips

Broadband and efficient vertical coupling remains a major challenge in silicon photonics. Conventional grating couplers enable efficient fiber-to-chip coupling but offer a limited bandwidth of around 30 nm, which restricts their use in applications such as wavelength-division multiplexing. In this work, we propose a new fiber-to-chip coupling architecture based on a standard silicon-on-insulator (SOI) platform, composed of a 45° planar reflector and a metalens. We optimized the coupler to operate around 1550 nm. Finite-difference time-domain (FDTD) simulations demonstrate a maximum coupling efficiency of -0.73 dB and a 1 dB bandwidth of 300 nm. The system shows good tolerances to misalignments and process variations, and is compatible with standard microfabrication methods.

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Publication Details

Journal
Optics Express
Published
2026-03-02
DOI
https://doi.org/10.1364/oe.588083
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

Efficient and broadband metalens based coupling architecture for silicon photonics chips

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Optics Express
Photonic and Optical Devices
article

Efficient and broadband metalens based coupling architecture for silicon photonics chips

Yvan R. P. Sortais, Laurent Mendizabal, Marc Roulliay, Maori Cabanes, Christophe Sauvan
article en

Abstract

Broadband and efficient vertical coupling remains a major challenge in silicon photonics. Conventional grating couplers enable efficient fiber-to-chip coupling but offer a limited bandwidth of around 30 nm, which restricts their use in applications such as wavelength-division multiplexing. In this work, we propose a new fiber-to-chip coupling architecture based on a standard silicon-on-insulator (SOI) platform, composed of a 45° planar reflector and a metalens. We optimized the coupler to operate around 1550 nm. Finite-difference time-domain (FDTD) simulations demonstrate a maximum coupling efficiency of -0.73 dB and a 1 dB bandwidth of 300 nm. The system shows good tolerances to misalignments and process variations, and is compatible with standard microfabrication methods.

Optics ExpressVol. 34(6)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Université Grenoble Alpes (FR)
Openalex Percentile: Top 40%
Photonic and Optical Devices
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